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Datasheet GI31C-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
GI3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GI3055 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/05/12 REVISED DATE :2007/01/25C
GI3055
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 26m 15A
The GI3055 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and  GTM mosfet | | |
| 2 | GI3055S | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B
GI3055S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 25m 18A
The GI3055S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an GTM mosfet | | |
| 3 | GI31C | NPN EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2005/05/12 REVISED DATE :
GI31C
Description Features
NP N EP ITAXI AL PL ANAR T RANSI STOR
The GI31C is designed for use in general purpose amplifier and switching applications. *Complementary to GI32C
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. GTM transistor | | |
| 4 | GI32C | PNP EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2005/05/12 REVISED DATE :
GI32C
Description Features
P NP EP ITAXI AL PL ANAR T RANSI STOR
The GI32C is designed for use in general purpose amplifier and switching applications. *Complementary to GI31C
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. GTM transistor | | |
| 5 | GI3302 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/08/24 REVISED DATE :
GI3302
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 50m 16A
The GI3302 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an GTM mosfet | | |
| 6 | GI3303 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/08/16 REVISED DATE :
GI3303
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 25m 28A
The GI3303 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance an GTM mosfet | | |
| 7 | GI3310 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/12/05 REVISED DATE :
GI3310
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-20V 150m -10A
The GI3310 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. T GTM mosfet | |
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