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Numéro de référence | GI20P02 | ||
Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
Fabricant | GTM | ||
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ISSUED DATE :2005/12/05
REVISED DATE :
GI20P02
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
52m
-18A
Description
The GI20P02 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Simple Drive Requirement
*2.5V Gate Drive Capability
*Fast Switching Characteristic
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-20
±12
-18
-14
-50
31.25
0.25
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
4.0
110
Unit
/W
/W
GI20P02
Page: 1/5
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Pages | Pages 5 | ||
Télécharger | [ GI20P02 ] |
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