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Numéro de référence | GI122 | ||
Description | NPN EPITAXIAL PLANAR TRANSISTOR | ||
Fabricant | GTM | ||
Logo | |||
1 Page
www.DataSheet4U.com
ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
GI122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GI122 is designed for use in general purposes and low speed switching applications.
Features
High DC current gain
Built-in a damper diode at E-C
Package Dimensions
TO-251
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
BVCBO
Collector to Emitter Voltage
BVCEO
Emitter to Base Voltage
BVEBO
Collector Current
IC
Total Power Dissipation(Tc=25 )
PD
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Ratings
+150
-55 ~ +150
100
100
5
5
20
Unit
V
V
V
A
W
Electrical Characteristics (Rating at 25 ambient temperature unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
BVCEO
BVEBO
100 - - V IC=1mA, IE=0
100 - - V IC=30mA, IB=0
5 - - V IE=1mA, IC=0
ICBO
ICEO
- - 10 A VCB=100V, IE=0
- - 10 A VCE=50V, IB=0
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
- - 2 mA VEB=5V, IC=0
- - 2 V IC=3A, IB=16mA
- - 4 V IC=5A, IB=20mA
- - 4 V IC=5A, IB=50mA
*VBE(on)
*hFE1
- - 2.5 V VCE=3V, IC=3A
1 - - K VCE=3V, IC=500mA
*hFE2
Cob
1 - - K VCE=3V, IC=3A
- - 200 pF VCB=10V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GI122
Page: 1/3
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Pages | Pages 3 | ||
Télécharger | [ GI122 ] |
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