|
|
PDF K3518 Data sheet ( Hoja de datos )
| Número de pieza | K3518 | |
| Descripción | MOSFET ( Transistor ) - 2SK3518 | |
| Fabricantes | Fuji Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K3518 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
2SuSpKer3F5A1P8-t4G-U0.Sc1oemMrieRsFeatures
eeHigh speed switching
hLow on-resistance
SNo secondary breadown
taLow driving power
.DaAvalanche-proof
wApplications
wwSwitching regulators
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
UPS (Uninterruptible Power Supply)
DC-DC converters
mMaximum ratings and characteristicAbsolute maximum ratings
o(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
.cDrain-source voltage
VDS
500 V
Continuous drain current
ID
±6 A
Pulsed drain current
ID(puls]
±24 A
UGate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
6A
t4Maximum Avalanche Energy
EAS
*1
115
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
ePeak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
eMax. power dissipation
PD Ta=25°C
Tc=25°C
2.16
32
W
Operating and storage
Tch
+150
°C
htemperature range
Tstg
-55 to +150
°C
Isolation Voltage
VISO
*5
2 kVrms
S*1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch =<150°C
ta*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 500V *5 t=60sec, f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
aItem
Drain-source breakdown voltaget
Gate threshold voltage
.DZero gate voltage drain current
Gate-source leakage current
wDrain-source on-state resistance
Forward transcondutance
wInput capacitance
Output capacitance
wReverse transfer capacitance
Turn-on time ton
.comTurn-off time toff
UTotal Gate Charge
t4Gate-Source Charge
eGate-Drain Charge
eAvalanche capability
hDiode forward on-voltage
SReverse recovery time
taReverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=500V VGS=0V
Tch=25°C
VDS=400V VGS=0V
VGS=±30V VDS=0V
ID=3A VGS=10V
Tch=125°C
ID=3A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=3A
VGS=10V
RGS=10 Ω
VCC=250V
ID=6A
VGS=10V
L=5.9mH Tch=25°C
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ.
500
3.0
10
1.15
2.5 5
430
60
2.5
10
5
20
5
15
6.5
2.5
6
1.00
0.5
1.7
Max. Units
V
5.0 V
25 µA
250
100 nA
1.50
Ω
S
675 pF
90
4.5
15 ns
7.5
30
7.5
22.5 nC
10.5
4.5
1.50
A
V
µs
µC
.DaThermalcharacteristics
wItem
wwThermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
3.91
58.0
Units
°C/W
°C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K3518.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K3510 | N-CHANNEL POWER MOS FET |  Renesas |
| K3511 | MOS Field Effect Transistor |  Kexin |
| K3511 | MOS FIELD EFFECT TRANSISTOR | Renesas |
| K3515-01MR | MOSFET ( Transistor ) - 2SK3515-01MR |  Fuji Electric |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |