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PDF RF5163 Data sheet ( Hoja de datos )
| Número de pieza | RF5163 | |
| Descripción | LINEAR POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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RF5163
0 3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Typical Applications
• 802.11b/g/n Access Points
• Commercial and Consumer Systems
• PCS Communication Systems
• 2.4GHz ISM Band Applications
• Portable Battery-Powered Equipment
• Broadband Spread-Spectrum Systems
Product Description
The RF5163 is a linear, medium-power, high-efficiency
amplifier IC designed specifically for low voltage opera-
tion. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as the final RF
amplifier in 802.11b/g/n access point transmitters. The
device is provided in a 4mmx4mm, 16-pin, leadless chip
carrier with a backside ground. The RF5163 is designed
to maintain linearity over a wide range of supply voltage
and power output.
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
16 15 14 13
RF IN 1
12 RF OUT
VREG1GND 2
11 RF OUT
P DOWN 3
P DETECT 4
10 RF OUT
Bias
9 GND
5678
Functional Block Diagram
2 PLCS
-A- 0.10 C A
4.00 SQ.
2.00 TYP
0.70
0.65
0.10 C B
2 PLCS
0.05 C
0.90
0.85
0.05
0.00
0.10 C B
2 PLCS
3.75 SQ
0.10 C A
2 PLCS
0.60
0.24
TYP
12°
MAX
-B-
1.87 TYP
-C-
Shaded lead is pin 1.
Dimensions in mm.
0.35
0.23
0.10 M C A B
Pin 1 ID
0.20 R
SEATING
PLANE
2.25
1.95
SQ.
0.75 TYP
0.50
0.65
Package Style: QFN, 16-Pin, 4x4
Features
• Single 3.3V or 5V Power Supply
• +33dBm Saturated Output Power (typ.)
• 20dB Large Signal Gain (typ.)
• 2.0% EVM @ +26dBm, 54Mbps (typ.)
• Separate Power Detect/Power Down Pins
• 1800MHz to 2500MHz Frequency Range
Ordering Information
RF5163
3V-5V, 2.5GHz Linear Power Amplifier, Matte-Sn
(Pb-free) Finish
RF5163L
3V-5V, 2.5GHz Linear Power Amplifier, Sn-Pb Finish
RF5163PCBA-41XFully Assembled Evaluation Board
RF5163PCBA-WD Fully Assembled Evaluation Board, With Driver
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A12 061114
2-627
1 page  
RF5163
The RF5163 has primarily been characterized with a voltage on VREG1 and VREG2 of +3.0VDC. However, the RF5163 will
operate from a wide range of control voltages. If a different control voltage is desired, contact RFMD Sales or Applica-
tions Engineering for additional data and guidance.
RF5163PCBA-WD Evaluation Board:
The RF5163PCBA-WD Evaluation Board was developed to assist prospective customers of the RF5163 with a com-
pletely characterized medium to high power amplifier solution incorporating a highly linear driver amplifier stage. In appli-
cations requiring more than 20dB to 22dB amplifier stage gain, the RF5163PCBA-WD Evaluation Board design may be
employed to achieve higher gain combined with ultra linear RF power output for high peak-to-average power ratio appli-
cations (e.g., orthogonal frequency division multiplex (OFDM) modulation).
Figure 1 below shows the major component line-up for an ultra linear fixed application (e.g., an access point (AP)) trans-
mitter capable of producing +26dBm RF POUT with an amplifier stage (driver + final stage power amplifier IC, RF2373 +
RF5163) EVM contribution of < 2.5% EVM, RMS (mean).
Antenna
Maximum Total Transmit EVM (RMS, Mean) @ 54Mbps:
RF Pout = +26dBm with Transmit 'Chain' EVM < 3.8%
RFMD RF5163
PA IC
G=20dB
RF In = +6dBm;RF Out=+26dBm
EVM < 2.0%
Vcc=+5Vdc
RFMD RF2373
Driver Amplifier
G=15dB
RF In = -9dBm; RF Out = +6dBm
EVM < 1%
Vcc = +5 Vdc
RFMD RF2959
WLAN "g"
Transciever IC
Vcc = 3 Vdc
RF Out = -9dBm
@54Mbps
EVM < 3%
OFDM
(IEEE802.11g/n)
MAC + BBP IC
Ethernet
Processor
PA Stage EVM Contribution
<2.5% @ +26dBm RF Pout
Figure 1. IEEE802.11g/n AP Transmitter Major Component Line-Up
Rev A12 061114
2-631
5 Page 
RF5163
Rev A12 061114
2-637
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet RF5163.PDF ] | |
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