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PDF RF5125 Data sheet ( Hoja de datos )
| Número de pieza | RF5125 | |
| Descripción | LINEAR POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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RF5125
3V TO 5V, 2.4GHz TO 2.5GHz
LINEAR POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: QFN, 16-Pin, 3 x 3
Features
Single Power Supply 3.0V to
5.0 V
+21dBm, <4.0%EVM,
185 mA@VCC = 3.3 V
28dB Typical Small Signal Gain
50Ω Input and Interstage Match-
ing
2400MHz to 2500MHz Fre-
quency Range
+23dBm, <4%EVM,
250 mA@VCC = 5.0 V
Applications
IEEE802.11b/g/n WLAN Applica-
tions
2.5GHz ISM Band Applications
Commercial and Consumer Sys-
tems
Portable Battery-Powered Equip-
ment
Spread-Spectrum and MMDS
Systems
16 15 14
NC 1
13
12 RF OUT/
VC2
RF IN 2
RF IN 3
Input
Match
Interstage
Match
NC 4
5
Bias Circuit
67
11 RF OUT
10 RF OUT
Power
Detector
9 NC
8
Functional Block Diagram
Product Description
The RF5125 is a linear, medium-power, high-efficiency, two-stage amplifier IC
designed specifically for battery-powered WLAN applications such as PC cards, mini
PCI, and compact flash applications. The device is manufactured on an advanced
InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-
spectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, QFN with a
backside ground. The RF5125 is designed to maintain linearity over a wide range of
supply voltage and power output.
Ordering Information
RF5125
3V to 5V, 2.4GHz to 2.5GHz Linear Power Amplifier
RF5125PCBA-41X Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
9GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A23 DS070515
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 12
1 page  
RF5125
Theory of Operation and Application Information
The RF5125 is a two-stage (2-stage) power amplifier (PA) with a minimum gain of 26dB (29dB typical) in the 2.4GHz to
2.5GHz Industrial, Scientific, and Medical (ISM) band. The RF5125 has a 50Ω internal input and interstage match. Only the
RF5125 output stage requires matching. The RF5125 is designed primarily for IEEE802.11g/n wireless local area network
(WLAN) applications where the available supply voltage and current are limited. This amplifier will operate to and below the
lowest expected voltage made available by a typical PC Card (PCMCIA or CardBus) slot in a laptop personal computer (PC). The
RF5125 maintains required linearity at decreased supply voltages.
The RF5125 operates from a single supply voltage of 3.0VDC to 5.0VDC to deliver specified performance. Power control is pro-
vided through two (2) bias control input pins (VREG1 and VREG2). For the best performance and lower current, there is a 68Ω
resistor placed as R2. In most applications these two (2) bias control input pins are connected together (before R1 and R2)
and employed as a single control input.
There is no required matching on the RF5125 input or interstage circuits. Only the RF5125 output stage requires matching
allowing the RF5125 to be implemented in applications requiring the fewest end product bill of materials (BOM) parts count
and lowest BOM cost. In most cases the capacitor used as part of the RF5125 output matching circuit is also employed to
accomplish DC-blocking. The RF5125PCBA evaluation board (available from RF Micro Devices, Inc. (RFMD)) is optimized for
3.3VDC supply input.
For best results, the RF5125PCBA evaluation board circuit layout should be copied as closely as possible. In particular, the
RF5125PCBA evaluation board ground layout, ground vias, and output matching components and location should be copied
without deviation. Other PCB layout configurations may provide acceptable RF5125 performance; however, the end product
design process will be faster and manufacturing first time yield (FTY) better if the RF5125PCBA evaluation board design is fol-
lowed. RFMD provides RF5125PCBA design and Gerber files upon request.
Though not difficult to implement to achieve state-of the-art performance, the RF5125 is employed at frequencies greater than
2GHz, where care in circuit layout and component selection is advisable. Of primary concern with RF5125 PCB layout is the
selection and placement of output matching components (RF5125PCBA bill of materials (BOM) is available upon request).
High-Q (quality factor) capacitors and inductors are not required in every RF5125 based design; however, it is highly recom-
mended that the RF5125PCBA evaluation board BOM be followed exactly for all initial end product designs. Upon initial base-
line of RF5125 based PCB performance, less costly (Lower-Q) output matching circuit components may be substituted and
evaluated against the initial design performance. RFMD experience indicates that end product FTY improvements more than
offset the cost difference between “High-Q” and “Low-Q” components.
The output matching capacitor is C10 (or C11) which is connected between the RF5125 and the connector J2 (RFOUT) as
shown on the RF5125PCBA Evaluation Board Schematic. This capacitor is selected in value and positioned with reference to
the 50Ω transmission line. This matching capacitor is a single 2.2pF shunt capacitor whose placement depends on the supply
voltage applied. With the nominal 3.0VDC to 3.6VDC supply voltage, the distance of the transmission line should be 115mils
(this is marked as the placement for C10). For a supply voltage of 5V, the length of the transmission line should be 101mils
(which is marked as the placement for C11). Notice, only one of the shunt output capacitors is placed at one time (C10 or
C11). The transmission line length and thickness should be duplicated as closely as possible in any customer PCB layout. Due
to PCB material variation (e.g., FR4) and PCB manufacturing variations, the customer may benefit from small adjustments
made to the length of the transmission line when the RF5125PCBA evaluation board is duplicated to produce an end product
PCB design. The initial PCB layout should include exposed ground area near C10 or C11 to allow ease of RF5125 output circuit
optimization; Smith Chart-based design tools may be used to assist in determining the desired capacitor value and transmis-
sion line physical characteristics. Note that the use of a single capacitor output circuit match results in a more sensitive match
and slightly reduced RF5125 bandwidth. In this configuration, the RF5125 will exhibit sufficient output spectrum bandwidth to
meet IEEE802.11b/g requirements when matched properly.
Rev A23 DS070515
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 12
5 Page 
RF5125
PCB Solder Mask Pattern
Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB
metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The
center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be
provided in the master data or requested from the PCB fabrication supplier.
A = 0.74 x 0.38 (mm) Typ.
B = 0.38 x 0.74 (mm) Typ.
C = 1.60 (mm) Sq.
0.50
Typ.
1.50
Typ.
Dimensions in mm.
Pin 16
BBBB
Pin 1
Pin 12
0.50
A
A
0.75
Typ.
A
A
C
A Typ. 1.50
A Typ.
0.55
A
Typ.
0.55
Typ.
Figure 2. PCB Solder Mask Pattern (Top View)
A
BBBB
Pin 8
0.75
Typ.
Thermal Pad and Via Design
The PCB land pattern has been designed with a thermal pad that matches the die paddle size on the bottom of the device.
Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been
designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing
strategies.
The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a
0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the
quantity of vias be increased by a 4:1 ratio to achieve similar results.
Rev A23 DS070515
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet RF5125.PDF ] | |
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