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PDF NBB-500 Data sheet ( Hoja de datos )
| Número de pieza | NBB-500 | |
| Descripción | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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NBB-500Cas-
cadable
Broadband
GaAs MMIC
Amplifier DC to
4 GHz
NBB-500
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 4GHz
RoHS Compliant & Pb-Free Product
Package Style: Micro-X, 4-Pin, Ceramic
Features
Reliable, Low-Cost HBT
Design
19.0dB Gain, +12.3dBm
P1dB @ 2 GHz
High P1dB of
+14.0 dBm @ 6.0 GHz
Single Power Supply Opera-
tion
50Ω I/O Matched for High
Freq. Use
Applications
Narrow and Broadband Com-
mercial and Military Radio
Designs
Linear and Saturated Amplifi-
ers
Gain Stage or Driver Amplifi-
ers for MWRadio/Optical
Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cel-
lular/DWDM)
RF IN 1
GND
4
MARKING - N5
3 RF OUT
2
GND
Functional Block Diagram
Product Description
The NBB-500 cascadable broadband InGaP/GaAs MMIC amplifier is a
low-cost, high-performance solution for general purpose RF and micro-
wave amplification needs. This 50Ω gain block is based on a reliable HBT
proprietary MMIC design, providing unsurpassed performance for small-
signal applications. Designed with an external bias resistor, the NBB-500
provides flexibility and stability. The NBB-500 is packaged in a low-cost,
surface-mount ceramic package, providing ease of assembly for high-vol-
ume tape-and-reel requirements. It is available in either packaged or chip
(NBB-500-D) form, where its gold metallization is ideal for hybrid circuit
designs.
Ordering Information
NBB-500NBB-500Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz
NBB-500-T1
NBB-500-D
NBB-500-E
NBB-X-K1
Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz
Tape & Reel, 1000 Pieces
NBB-500 Chip Form (100 pieces minimum order)
Fully Assembled Evaluation Board
Extended Frequency InGaP Amp Designer’s Tool Kit
Optimum Technology Matching® Applied
GaAs HBT
9GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A9 DS070327
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 12
1 page  
NBB-500
Chip Outline Drawing - NBB-500-D
Chip Dimensions: 0.017” x 0.017” x 0.004”
UNITS:
Inches
(mm)
Back of chip is ground.
OUTPUT
INPUT
GND
VIA
0.017 ± 0.001
(0.44 ± 0.03)
0.017 ± 0.001
(0.44 ± 0.03)
0.004 ± 0.001
(0.10 ± 0.03)
Sales Criteria - Unpackaged Die
Die Sales Information
• All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be nego-
tiated on a case-by-case basis.
• Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 - Die Product
Final Visual Inspection Criteria1.
• Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrier is allow-
able.
Die Packaging
• All die are packaged in GelPak ESD protective containers with the following specification:
O.D.=2"X2", Capacity=400 Die (20X20 segments), Retention Level=High(X0).
• GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is
opened the GelPak/s should be stored in a controlled nitrogen environment. Do not press on the cover of a closed
GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers.
• Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit 2.
Package Storage
• Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability.
• Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit2.
Die Handling
• Proper ESD precautions must be taken when handling die material.
• Die should be handled using vacuum pick-up equipment, or handled along the long side with a sharp pair of twee-
zers. Do not touch die with any part of the body.
• When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force
may damage GaAs devices.
Rev A9 DS070327
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 12
5 Page 
NBB-500
RoHS* Banned Material Content
RoHS Compliant:
Package total weight in grams (g):
Compliance Date Code:
Bill of Materials Revision:
Pb Free Category:
Yes
0.019
0536
-
e3
Bill of Materials
Die
Molding Compound
Lead Frame
Die Attach Epoxy
Wire
Solder Plating
Pb
0
0
0
0
0
0
Parts Per Million (PPM)
Cd
Hg
Cr VI
PBB
0000
0000
0000
0000
0000
0000
PBDE
0
0
0
0
0
0
This RoHS banned material content declaration was prepared solely on information, including analytical
data, provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted
* DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the
use of certain hazardous substances in electrical and electronic equipment
Rev A9 DS070327
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NBB-500.PDF ] | |
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