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PDF C1384 Data sheet ( Hoja de datos )

Número de pieza C1384
Descripción NPN Transistor - 2SC1384
Fabricantes Panasonic Semiconductor　
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No Preview Available ! C1384 Hoja de datos, Descripción, Manual

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2SC1383, 2SC1384
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA683 and 2SA684
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Complementary pair with 2SA683 and 2SA684.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SC1383
base voltage 2SC1384
Collector to 2SC1383
emitter voltage 2SC1384
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
30
60
25
50
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base 2SC1383
voltage
2SC1384
ICBO
VCBO
VCB = 20V, IE = 0
IC = 10µA, IE = 0
0.1 µA
30
V
60
Collector to emitter 2SC1383
voltage
2SC1384
VCEO
IC = 2mA, IB = 0
25
50
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IE = 10µA, IC = 0
5
V
VCE = 10V, IC = 500mA*2
85 160 340
VCE = 5V, IB = 1A*2
50 100
IC = 500mA, IB = 50mA*2
0.2 0.4
V
IC = 500mA, IB = 50mA*2
0.85 1.2
V
VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
VCB = 10V, IE = 0, f = 1MHz
11 20 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S
170 ~ 340
1

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