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PDF IRLL024NQ Data sheet ( Hoja de datos )
| Número de pieza | IRLL024NQ | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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PD-94152
AUTOMOTIVE MOSFET
IRLL024NQ
Typical Applications
q Electronic Fuel Injection
HEXFET® Power MOSFET
q Active Suspension
q Power Doors, Windows & Seats
q Cruise Control
q Air Bags
Benefits
q Advanced Process Technology
q Ultra Low On-Resistance
D
VDSS = 55V
RDS(on) = 0.065Ω
G
q 175°C Operating Temperature
q Repetitive Avalanche Allowed up to Tjmax
q Dynamic dv/dt Rating
ID = 3.1A
S
q Automotive [Q101] Qualified
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET
in a SOT-223 package utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of this Automotive
qualified HEXFET Power MOSFET are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SOT-223 package is designed for surface mount and the enlarged tab
provides improved thermal characteristics making it ideal in a variety of power
applications. Power dissipation of 1.0W is possible in a typical surface mount
application. Available in Tape & Reel.
SOT-223
Absolute Maximum Ratings
Parameter
Max.
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current Q
Power DissipationS
Linear Derating Factor
3.1
2.6
12
1.3
8.3
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche EnergyT
Avalanche CurrentQ
Repetitive Avalanche EnergyV
Peak Diode Recovery dv/dt U
±16
87
See Fig.16c, 16d, 19, 20
9.9
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
-55 to + 175
Parameter
Typ.
Max.
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
90
50
120
60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
Units
A
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
03/16/01
1 page  
IRFLL024NQ
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125 150
TC , Case Temperature ( °C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10 100
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
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