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PDF IRHY58Z30CM Data sheet ( Hoja de datos )
| Número de pieza | IRHY58Z30CM | |
| Descripción | (IRHY5xZ30CM) RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
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PD-93824E
IRHY57Z30CM
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHY57Z30CM 100K Rads (Si) 0.03Ω
IRHY53Z30CM 300K Rads (Si) 0.03Ω
IRHY54Z30CM 500K Rads (Si) 0.03Ω
IRHF58Z30CM 1000K Rads (Si) 0.035Ω
JANSR2N7482T3
30V, N-CHANNEL
REF: MIL-PRF-19500/702
5 TECHNOLOGY
ID QPL Part Number
18A* JANSR2N7482T3
18A* JANSF2N7482T3
18A* JANSG2N7482T3
18A* JANSH2N7482T3
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
18*
18* A
72
75 W
0.6 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy Á
177
mJ
Avalanche Current À
18 A
Repetitive Avalanche Energy À
7.5 mJ
Peak Diode Recovery dv/dt Â
1.7 V/ns
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.063in./1.6mm from case for 10 sec)
Weight
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/25/06
1 page  
Pre-Irradiation
IRHY57Z30CM, JANSR2N7482T3
4000
3200
2400
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Ciss
1600
800
Crss
0
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 1282A
15
VDS = 24V
VDS = 15V
VDS = 6V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
TJ = 25° C
VGS = 0 V
1
0.4 0.8 1.2 1.6
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
10 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
10ms
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHY58Z30CM.PDF ] | |
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