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PDF IRHLNA73064 Data sheet ( Hoja de datos )
| Número de pieza | IRHLNA73064 | |
| Descripción | (IRHLNA7x064) POWER MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-97177A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHLNA77064 100K Rads (Si)
IRHLNA73064 300K Rads (Si)
RDS(on)
0.012Ω
0.012Ω
ID
56A*
56A*
IRHLNA77064
60V, N-CHANNEL
TECHNOLOGY
SMD-2
Internatio
MOSFETs
nparol vRideecstiimfieprle’ssoRlu7tTioMnLtooginicteLrfeacvienlg
Power
CMOS
and TTL control circuits to power devices in space and
other radiation environments. The threshold voltage
remains within acceptable operating limits over the
full operating temperature and post radiation. This is
achieved while maintaining single event gate rupture
and single event burnout immunity.
These devices are used in applications such as current
boost low signal source in PWM, voltage comparator
and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @VGS = 4.5V,TC = 25°C
ID @VGS = 4.5V,TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
56*
56*
224
250
2.0
±10
402
56
25
6.9
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
1
04/06/07
1 page  
Pre-Irradiation
IRHLNA77064
30
ID = 56A
25
20
15
TJ = 150°C
10
5
TJ = 25°C
0
2 3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
13
12
11
10
9
8
7
6
0
TJ = 150°C
TJ = 25°C
Vgs = 4.5V
20 40 60 80
ID, Drain Current (A)
100
Fig 6. Typical On-Resistance Vs
Drain Current
85
ID = 1.0mA
75
65
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
2.5
2.0
1.5
1.0 ID = 50µA
ID = 250µA
0.5 ID = 1.0mA
ID = 150mA
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRHLNA73064.PDF ] | |
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