IRHLF730Z4 Datasheet PDF - International Rectifier
| Part Number | IRHLF730Z4 | |
| Description | (IRHLF7x0Z4) POWER MOSFET | |
| Manufacturers | International Rectifier | |
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PD - 94695B
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
IRHLF770Z4
60V, N-CHANNEL
TECHNOLOGY
c
Product Summary
Part Number Radiation Level RDS(on)
IRHLF770Z4 100K Rads (Si) 0.5Ω
IRHLF730Z4 300K Rads (Si) 0.5Ω
IRHLF740Z4 600K Rads (Si) 0.5Ω
IRHLF780Z4 1000K Rads (Si) 0.5Ω
ID
1.6A*
1.6A*
1.6A*
1.6A*
T0-39
International Rectifier’s R7TM Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radiation.
This is achieved while maintaining single event gate
rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary P-Channel Available -
IRHLF7970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
1.6*
1.0* A
6.4
5.0 W
0.04
±10
W/°C
V
9.0 mJ
1.6 A
0.5 mJ
3.5
-55 to 150
V/ns
oC
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF7970Z4
For footnotes refer to the last page
www.irf.com
1
04/07/04
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Pre-Irradiation
IRHLF770Z4
250
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
200 Coss = Cds + Cgd
Ciss
150
Coss
100
50
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12 ID = 1.6A
10
VDS = 48V
VDS = 30V
VDS = 12V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
012345
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10 10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150°C
1
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100µs
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0 10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRHLF730Z4 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRHLF730Z4.PDF Datasheet ] | |
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