IRHLF6970Z4 Datasheet PDF - International Rectifier
| Part Number | IRHLF6970Z4 | |
| Description | (IRHLF6930Z4 / IRHLF6970Z4) POWER MOSFET | |
| Manufacturers | International Rectifier | |
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PD - 94685
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLF6970Z4 100K Rads (Si) 1.2Ω -1.6A
IRHLF6930Z4 300K Rads (Si) 1.2Ω -1.6A
IRHLF6970Z4
60V, P-CHANNEL
TECHNOLOGY
International Rectifier’s R6TM Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radia-
tion. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
These devices are used in applications such as cur-
rent boost low signal source in PWM, voltage com-
parator and operational amplifiers.
T0-39
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary N-Channel Available -
IRHLF670Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = -4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = -4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-1.6
-1.0 A
-6.4
5.0 W
0.04
W/°C
±10 V
10 mJ
-1.6 A
0.5 mJ
-4.0 V/ns
-55 to 150
oC
300 (0.063in/1.6mm from case for 10s)
0.98 ( Typical )
g
For footnotes refer to the last page
www.irf.com
1
07/07/03
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Pre-Irradiation
IRHLF6970Z4
250
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
200 Coss = Cds + Cgd
Ciss
150
100
50
0
1
Coss
Crss
10
-VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12 ID = -1.6A
10
VDS =-48V
VDS = -30V
VDS = -12V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
012345
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
TJ = 150°C
TJ = 25°C
1
0.1
0
VGS = 0V
123456
-VSD , Source-to-Drain Voltage (V)
7
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100µ s
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRHLF6970Z4 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRHLF6970Z4.PDF Datasheet ] | |
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