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PDF IRF6668 Data sheet ( Hoja de datos )
| Número de pieza | IRF6668 | |
| Descripción | DirectFet Power MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 97044A
IRF6668
DirectFET Power MOSFET
l RoHS compliant containing no lead or bromide
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
Qg tot Qgd
80V max ±20V max 12mΩ@ 10V 22nC 7.8nC
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH SJ SP
MZ MN
DirectFET
ISOMETRIC
Description
The IRF6668 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6668 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V ETSI
input voltage range systems. The IRF6668 is also ideal for secondary side synchronous rectification in regulated isolated DC-
DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance
isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
IS @ TC = 25°C
IS @ TC = 70°C
ISM
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
fContinuous Source Current (Body Diode)
fContinuous Source Current (Body Diode)
ePulsed Source Current (Body Diode)
80 V
±20
55
44
170 A
81
52
170
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction temperature.
TC measured with thermocouple mounted to top (Drain) of part.
www.irf.com
1
11/4/05
1 page  
60
ID = 12A
50
40
30
TJ = 125°C
20
10
TJ = 25°C
0
4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 8. Typical On-Resistance vs. Gate Voltage
1000
IRF6668
60
TJ = 25°C
50 Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
40 Vgs = 15V
30
20
10
0
0 20 40 60 80 100
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs. Drain Current
6.0
100
TJ = 150°C
TJ = 25°C
TJ = -40°C
10
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
01
10 100
VDS, Drain-to-Source Voltage (V)
Fig12. Maximum Safe Operating Area
www.irf.com
5.0
4.0
ID = 100µA
3.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 11. Typical Threshold Voltage vs.
Junction Temperature
100
ID TOP
4.3A
80 7.6A
BOTTOM 23A
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6668.PDF ] | |
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