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PDF IRF6662 Data sheet ( Hoja de datos )
| Número de pieza | IRF6662 | |
| Descripción | DirectFet Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Lead and Bromide Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
PD - 97039
IRF6662
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
100V max ±20V max 17.5mΩ@ 10V
Qg tot
Qgd
Vgs(th)
22nC
6.8nC
3.9V
MZ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MZ
Description
The IRF6662 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6662 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Max.
100
±20
8.3
6.6
47
66
39
4.9
Units
V
A
mJ
A
100
ID = 4.9A
80
60
40 TJ = 125°C
20
0 TJ = 25°C
4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
12.0
10.0 ID= 4.9A VDS= 80V
8.0
VDS= 50V
VDS= 20V
6.0
4.0
2.0
0.0
0
5 10 15 20 25
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs.
Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 3.2mH, RG = 25Ω, IAS = 4.9A.
1
08/05/05
1 page  
1000
VGS = 0V
100
TJ = 150°C
TJ = 25°C
10 TJ = -40°C
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
IRF6662
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
1msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
01
10msec
10
100 1000
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
10 7.0
ID = 100µA
8
6.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
6 5.0
4 4.0
2 3.0
0
25 50 75 100 125 150
TA , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
160
140
120
100
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID TOP
1.6A
1.9A
BOTTOM 4.9A
80
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6662.PDF ] | |
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