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PDF RF3145 Data sheet ( Hoja de datos )
| Número de pieza | RF3145 | |
| Descripción | QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RF3145 (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
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RF3145
0 QUAD-BAND GSM/EDGE/GSM850/DCS/PCS
POWER AMPLIFIER MODULE
RoHS Compliant & Pb-Free Product
Typical Applications
• 3V Dual/Triple/Quad-Band Mode Handsets • Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• GSM850 and GSM900 Products
• EDGE and GPRS Class 12 Compatible
• DCS/PCS Products
Product Description
The RF3145 is a high power, high efficiency power ampli-
fier module with integrated power control. This module is
self-contained with 50Ω input and output terminals. The
device is manufactured on an advance Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final dual-mode
GMSK/8PSK RF amplifier in GSM, DCS and PCS hand-
held cellular equipment and other applications in the
824MHz to 849MHz, 880MHz to 915MHz, and in the
1710MHz to 1910MHz bands. Internal band select pro-
vides control to select the GSM850/GSM900 or
DCS/PCS band. The device is packaged on ultra-small
LCC, minimizing the required board space.
1 1.70
1.45
10.00±0.10
9.600 TYP
8.800 TYP
8.200 TYP
7.400 TYP
6.800 TYP
6.000 TYP
5.475
4.525
4.000 TYP
3.200 TYP
2.600 TYP
1.800 TYP
1.200 TYP
0.400 TYP
0.000
10.00±0.10
0.450±0.075
1
8.725
6.155
6.100
5.925
5.400 TYP
4.600 TYP
4.075
3.955
1.275
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
9SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
DCS IN 1
BAND SELECT 2
TX ENABLE 3
VBATT 4
VMODE 5
VRAMP 6
GSM IN 7
12
11 DCS OUT
10 NC
9 GSM OUT
8
Functional Block Diagram
Package Style: Module (10mmx10mm)
Features
• Integrated Power Control & Band Select
• Single 3.0V to 4.8V Supply Voltage
• +35.0dBm GSM Output Pwr at 3.5V
• +33dBm DCS/PCS Output Pwr at 3.5V
• +29dBm 8PSK Output Pwr
• 53% GSM and 50% DCS/PCS PAE
Ordering Information
RF3145
Quad-Band GSM/EDGE/GSM850/DCS/PCS Power
Amplifier Module
Power Amplifier Module, 5 Piece Sample Pack
RF3145PCBA-41XFully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 050919
2-519
1 page  
RF3145
Parameter
Specification
Min.
Typ.
Max.
GSM 900MHz Band
8PSK Mode
Operating Frequency Range
Output Power to Meet EVM and
ACPR Spectrum
Total Efficiency (PAE)
Gain
Gain Temperature Coefficient
EVM RMS
880
+28.5
+26.5
28.0
ACPR and Spectrum Mask
Output Noise Power
Forward Isolation
Second Harmonic
Third Harmonic
All other Non-Harmonic Spurious
Input Impedance
Input VSWR
Output Load VSWR
Output Load Ruggedness
Output Load Impedance
+29.0
25
29.5
28.0
-0.03
2.0
-36
-60
-85
50
6:1
10:1
50
915
31.0
3.5
5.0
-34
-56
-63
-84
-25
-7
-7
-36
2.5:1
Unit
MHz
dBm
dBm
%
dB
dB
db/°
%
%
dBc
dBc
dBc
dBm
dBm
dBm
dBm
dBm
Ω
Ω
Condition
Temp=+25 °C, VCC=3.5V,
BandSelect=Low, VMODE=High,
VRAMP=VRAMP,MAX, PIN=+4dBm
Freq=880MHz to 915MHz, 25% Duty Cycle,
Pulse Width=1154μs
Temp=-20°C to +85°C, VCC=3.2V
At POUT,MAX, VCC=3.5V
Temp=-20°C to +85°C
Temp=-20°C to +85°C, VCC=3.2V to 4.8V
POUT < 28.5 dBm
POUT<26.5dBm, VCC=3.2V to 4.8V,
<2.5:1VSWR, All angles
At 200kHz in 30kHz BW, POUT<28.5dBm
At 400kHz in 30kHz BW, POUT<28.5dBm
At 600kHz to 1800kHz in 30kHz BW,
POUT < 28.5 dBm
RBW=100kHz, 935MHz to 960MHz,
POUT > +5 dBm
TX Enable=0V, VRAMP = 0.2V, PIN=+6dBm
Over all power levels
Over all power levels
Over all power levels
Spurious<-36dBm, VRAMP=0.2V to 1.6V,
RBW = 3 MHz
Load impedance presented at RF OUT pad
Rev A4 050919
2-523
5 Page 
RF3145
DCS/PCS IN
BAND SELECT
TX ENABLE
VBATT
VMODE
VRAMP
GSM IN
Application Schematic
50 Ω μstrip
50 Ω μstrip
15 kΩ**
1
2
3
4
5
6
7
12
11
10
9
8
50 Ω μstrip
50 Ω μstrip
DCS/PCS OUT
GSM OUT
** Used to filter noise and spurious from base band.
DCS/PCS IN
BAND SELECT
TX ENABLE
VBATT
VMODE
VRAMP
GSM IN
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1
1 GND P2-1
CON1
P2
1 VCC
CON1
50 Ω μstrip
3.3 μF*
50 Ω μstrip
15 kΩ**
1
2
3
4
5
6
7
12
50 Ω μstrip ***
11 DCS/PCS OUT
10
50 Ω μstrip ***
9 GSM OUT
8
*Not required in most applications.
** Used to filter noise and spurious from baseband.
*** 0.05 dB loss for GSM
0.15 dB loss for DCS
Rev A4 050919
2-529
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet RF3145.PDF ] | |
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