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PDF BLF2022-90 Data sheet ( Hoja de datos )
| Número de pieza | BLF2022-90 | |
| Descripción | UHF power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF2022-90
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Sep 09
2003 Feb 24
1 page  
www.DataSheet4U.com
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF2022-90
15
handbook, halfpage
Gp
(dB)
10
Gp
MLD833
30
ηD
(%)
20
5 10
ηD
00
25 30 35 40 45
PL(AV) (dBm)
Single carrier W-CDMA performance.
VDS = 28 V; IDQ = 750 mA; Th = 25 °C; f = 2140 MHz.
Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on
CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
Fig.6 Power gain and drain efficiency as functions
of average load power; typical values.
handbook, h0alfpage
ACLR
(dBc)
−20
MLD834
−40
ACLR5
−60
ACLR10
−80
25 30 35 40 45
PL(AV) (dBm)
Single carrier W-CDMA performance.
VDS = 28 V; IDQ = 750 mA; Th = 25 °C; f = 2140 MHz.
Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on
CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
Fig.7 Adjacent channel leakage ratio (ACLR5 and
ACLR10) as function of average load power;
typical values.
2003 Feb 24
5
5 Page 
www.DataSheet4U.com
Philips Semiconductors
UHF power LDMOS transistor
NOTES
Product specification
BLF2022-90
2003 Feb 24
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BLF2022-90.PDF ] | |
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