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PDF BLF2022-30 Data sheet ( Hoja de datos )
| Número de pieza | BLF2022-30 | |
| Descripción | UHF power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BLF2022-30 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D750
BLF2022-30
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Dec 19
2003 Feb 24
1 page  
www.DataSheet4U.com
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF2022-30
15
handbook, halfpage
Gp
(dB)
Gp
10
ηD
5
MLD940
30
ηD
(%)
20
0
handbook, halfpage
dim
(dBc)
− 20
10 −40
MLD941
0
ACLR
(dBc)
− 20
dim
ACLR
− 40
00
0 2 4 6 8 10
PL (AV) (W)
Two-carrier W-CDMA performance.
VDS = 28 V; IDQ = 270 mA; Th ≤ 25 °C; f1 = 2170 MHz.
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Fig.6 Power gain and drain efficiency as functions
of average load power; typical values.
−60 −60
0 2 4 6 8 10
PL (AV) (W)
Two-carrier W-CDMA performance.
VDS = 28 V; IDQ = 270 mA; Th ≤ 25 °C; f1 = 2155 MHz;
f1 = 2165 MHz;.
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Fig.7 Intermodulation distortion and adjacent
channel leakage ratio (ACLR) as functions
of average load power; typical values.
2003 Feb 24
5
5 Page 
www.DataSheet4U.com
Philips Semiconductors
UHF power LDMOS transistor
NOTES
Product specification
BLF2022-30
2003 Feb 24
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BLF2022-30.PDF ] | |
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