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Número de pieza | BF1212R | |
Descripción | N-channel dual-gate MOS-FETs | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1212; BF1212R; BF1212WR
N-channel dual-gate MOS-FETs
Product specification
2003 Nov 14
1 page www.DataSheet4U.com
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1212; BF1212R; BF1212WR
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 12 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-ss
Cig2-ss
Coss
Crss
F
Gtr
Xmod
forward transfer admittance pulsed; Tj = 25 °C
28 33 43
input capacitance at gate 1 f = 1 MHz
− 1.7 2.2
input capacitance at gate 2 f = 1 MHz
− 1.1 −
output capacitance
f = 1 MHz
− 0.9 −
reverse transfer capacitance f = 1 MHz
− 15 30
noise figure
f = 11 MHz; GS = 20 mS; BS = 0
−4−
f = 400 MHz; YS = YS (opt)
− 0.9 1.6
f = 800 MHz; YS = YS (opt)
− 1.1 1.8
power gain
f = 200 MHz; GS = 2 mS; BS = BS (opt);
GL = 0.5 mS; BL = BL (opt)
−
35 −
f = 400 MHz; GS = 2 mS; BS = BS (opt);
GL = 1 mS; BL = BL (opt)
−
30 −
f = 800 MHz; GS = 3.3 mS; BS = BS (opt); −
GL = 1 mS; BL = BL (opt)
25 −
cross-modulation
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 1
at 0 dB AGC
90 −
−
at 10 dB AGC
− 89 −
at 40 dB AGC
100 104 −
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBµV
dBµV
dBµV
Note
1. Measured in test circuit Fig.21.
2003 Nov 14
5
5 Page www.DataSheet4U.com
Philips Semiconductors
N-channel dual-gate MOS-FETs
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
Product specification
BF1212; BF1212R; BF1212WR
SOT143B
DB
E AX
y
e
4
1
b1
e1
vM A
HE
bp w M B
3
2
A
A1
Q
c
Lp
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
b1
c
D
E
e e1 HE Lp Q
vw
y
mm
1.1
0.9
0.1
0.48 0.88
0.38 0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9 1.7
2.5 0.45 0.55
2.1 0.15 0.45
0.2
0.1
0.1
OUTLINE
VERSION
SOT143B
2003 Nov 14
IEC
REFERENCES
JEDEC
EIAJ
11
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet BF1212R.PDF ] |
Número de pieza | Descripción | Fabricantes |
BF1212 | N-channel dual-gate MOS-FETs | NXP Semiconductors |
BF1212R | N-channel dual-gate MOS-FETs | NXP Semiconductors |
BF1212WR | N-channel dual-gate MOS-FETs | NXP Semiconductors |
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