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دیتاشیت - Dc Components - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

شماره قطعه LB125E
شرح مفصل TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
تولید کننده Dc Components 
آرم Dc Components 


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LB125E شرح
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
LB125E
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for lighting applications and switch mode
power supplies.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pluse)
Total Power Dissipation(TC=25oC)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
IC
PD
TJ
TSTG
600
400
9
5
8
40
+150
-55 to +150
Unit
V
V
V
A
A
W
oC
oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 600
-
-
Collector-Emitter Breakdown Voltage
BVCEO 400
-
-
Emitter-Base Breakdown Volatge
BVEBO
9
-
-
Collector Cutoff Current
ICBO
ICEO
-
-
- 100
- 100
Collector-Emitter Saturation Voltage(1)
VCE(sat)1
VCE(sat)2
-
-
- 0.5
- 0.7
VCE(sat)3
-
- 1.1
Base-Emitter Saturation Voltage(1)
VBE(sat)1
VBE(sat)2
-
-
- 1.1
- 1.2
DC Current Gain(1)
hFE1
8
- 35
hFE2
10
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit Test Conditions
V IC=1mA, IE=0
V IC=10mA, IB=0
V IE=10mA, IC=0
µA VCB=800V, IE=0
µA VCE=400V, IB=0
V IC=1A, IB=0.2A
V IC=2A, IB=0.4A
V IC=3A, IB=0.75A
V IC=1A, IB=0.2A
V IC=2A, IB=0.4A
- IC=2A, VCE=5V
- IC=10mA, VCE=5V
Classification of hFE1
Rank
Range
B1
8~17
B2
15~21
B3
19~25
B4
23~31
B5
29~35

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