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PDF LB122T Data sheet ( Hoja de datos )

Número de pieza LB122T
Descripción TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
LB122T
TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
Description
Designed for use in medium power switching
applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
600
Collector-Emitter Voltage
VCEO
400
Emitter-Base Voltage
VEBO
6
Collector Current (DC)
IC 800
Collector Current (pulse)
IC 1600
Base Current (DC)
IB 100
Base Current (pulse)
Total Power Dissipation(TC=25oC)
IB
PD
200
20
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
mA
mA
mA
mA
W
oC
oC
.304(7.72)
.285(7.52)
.041(1.05)
.037(0.95)
.154(3.91)
.150(3.81)
.105(2.66)
.095(2.41)
.055(1.39)
.045(1.14)
TO-126
.152(3.86)
.138(3.50)
.279(7.09)
.275(6.99)
1 23
3oTyp
.620(15.75)
.600(15.25)
.052(1.32)
.048(1.22)
3oTyp
.032(0.81)
.028(0.71)
.189(4.80)
.171(4.34)
.022
(0.55)
Typ
Dimensions in inches and (millimeters)
3oTyp
3oTyp
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
BVCBO 600
-
-
V IC=100µA
Collector-Emitter Breakdown Voltage BVCEO 400
-
-
V IC=10mA
Emitter-Base Breakdown Voltage
BVEBO
6
-
- V IE=10µA
Collector Cutoff Current
ICBO
ICEO
-
-
- 10 µA VCB=600V
- 10 µA VCE=400V
Emitter Cutoff Current
IEBO
-
- 10 µA VEB=6V
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
VCE(sat)1
VCE(sat)2
VBE(sat)
-
-
-
- 0.4 V IC=100mA, IB=20mA
- 0.8 V IC=300mA, IB=60mA
- 1 V IC=100mA, IB=20mA
DC Current Gain(1)
hFE1
10
-
40
- IC=0.1A, VCE=10V
hFE2
10
-
-
- IC=0.5A, VCE=10V
Turn-Off Time
Toff - - 0.6 µS IC=0.3A, VCC=100V, IB1=-IB2=0.06A
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE1
Rank
Range
B1
10~17
B2
13~22
B3
18~27
B4
23~32
B5
28~37
B6
33~40

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