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IRF7807VPBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF7807VPBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7807VPBF fiche technique
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PD-95210
IRF7807VPbF
• N Channel Application Specific MOSFET
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
•
•
100% RG Tested
Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that
power the latest generation of mobile microprocessors.
A pair of IRF7807V devices provides the best cost/
performance solution for system voltages, such as
3.3V and 5V.
HEXFET® Power MOSFET
SO-8
S1
S2
S3
G4
A
8D
7D
6D
5D
Top View
DEVICE CHARACTERISTICS…
RDS(on)
QG
QSW
QOSS
IRF7807V
17 m
9.5 nC
3.4 nC
12 nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
(VGS 4.5V)
™Pulsed Drain Current
TA = 25°C
TA = 70°C
Power Dissipation eÃÃÃÃÃÃÃ TA = 25°C
TA = 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
™Pulsed Source Current
Thermal Resistance
Parameter
ehMaximum Junction-to-Ambient
hMaximum Junction-to-Lead
Symbol
VDS
VGS
ID
IDM
PD
TJ , TSTG
IS
ISM
Symbol
RθJA
RθJL
IRF7807V
30
±20
8.3
6.6
66
2.5
1.6
-55 to 150
2.5
66
Units
V
A
W
°C
A
Typ
–––
–––
Max
50
20
Units
°C/W
11/3/04

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