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Numéro de référence | IRF7493PBF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
www.DataSheet4U.com
PD - 95289
IRF7493PbF
Applications
l High frequency DC-DC converters
l Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) max Qg (typ.)
:80V 15m @VGS=10V 35nC
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
S
S
S
l Fully Characterized Avalanche Voltage G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fMaximum Power Dissipation
fMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
RθJA
Junction-to-Lead
Junction-to-Ambient
Notes through
are on page 9
Max.
80
± 20
9.3
7.4
74
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
www.irf.com
1
09/21/04
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Pages | Pages 9 | ||
Télécharger | [ IRF7493PBF ] |
No | Description détaillée | Fabricant |
IRF7493PBF | Power MOSFET ( Transistor ) | International Rectifier |
IRF7493PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |
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