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PDF IRF7433PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7433PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
VDSS
-12V
PD - 95305
IRF7433PbF
HEXFET® Power MOSFET
RDS(on) max
24mΩ@VGS = -4.5V
30mΩ@VGS = -2.5V
46mΩ@VGS = -1.8V
ID
-8.7A
-7.4A
-6.3A
Description
These P-Channel MOSFETs from International S 1
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
S
2
area. This benefit provides the designer with an S 3
extremely efficient device for use in battery and load
management applications..
G
4
8
A
D
7D
6D
5D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Top View
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-8.9
-7.1
-36
2.5
1.6
0.02
±8
-55 to +150
SO-8
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
50
Units
°C/W
1
10/12/04
1 page  
IRF7433PbF
9.0
7.5
6.0
4.5
3.0
1.5
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
-
+ VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF7433PBF.PDF ] | |
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