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Dc Components - TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Numéro de référence DMBT5401
Description TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Fabricant Dc Components 
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DMBT5401 fiche technique
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DMBT5401
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose applications requiring
high breakdown voltage.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
-160
-150
-5
-500
225
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO -160
Collector-Emitter Breakdown Voltage
BVCEO -150
Emitter-Base Breakdown Volatge
BVEBO
-5
Collector Cutoff Current
ICBO
-
Collector-Emitter Saturation Voltage(1)
VCE(sat)1
VCE(sat)2
-
-
Base-Emitter Saturation Voltage(1)
VBE(sat)1
VBE(sat)2
-
-
DC Current Gain(1)
hFE1
hFE2
50
60
hFE3
50
Transition Frequency
fT 100
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-50
-0.2
-0.5
-1
-1
-
240
-
300
6
Unit
V
V
V
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=-100µA
IC=-1mA
IE=-10µA
VCB=-120V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-50mA, VCE=-5V
IC=-10mA, VCE=-10V, f=100MHz
VCB=-10V, f=1MHz

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