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PDF DMBT2222 Data sheet ( Hoja de datos )
| Número de pieza | DMBT2222 | |
| Descripción | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DMBT2222
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and amplifier
applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
30
Emitter-Base Voltage
VEBO
5
Collector Current
IC 600
Total Power Dissipation
PD 250
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
mA
mW
oC
oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO
60
-
Collector-Emitter Breakdown Voltage
BVCEO
30
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage(1)
VCE(sat)1
VCE(sat)2
-
-
-
-
Base-Emitter Saturation Voltage(1)
VBE(sat)1
VBE(sat)2
-
-
-
-
hFE1
35
-
DC Current Gain(1)
hFE2
hFE3
50
75
-
-
hFE4
100
-
hFE5
30
-
Transition Frequency
fT 250
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
0.01
10
0.4
1.6
1.3
2.6
-
-
-
300
-
-
Unit
V
V
V
µA
nA
V
V
V
V
-
-
-
-
-
MHz
Test Conditions
IC=10µA
IC=10mA
IE=10µA
VCB=50V
VCE=60V, VEB(off)=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=0.1mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=150mA, VCE=10V
IC=500mA, VCE=10V
IC=20mA, VCE=20V, f=100MHz
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