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DCR03B fiches techniques PDF

Dc Components - (DCR03B - DCR03F) TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

Numéro de référence DCR03B
Description (DCR03B - DCR03F) TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
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DCR03B fiche technique
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DCR03B
THRU
DCR03F
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 200 to 600 Volts
CURRENT - 0.3 Ampere
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 200 to 600 volts
* Sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
Pinning
1 = Gate, 2 = Anode, 3 = Cathode
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol
Peak Repetitive Off-State
Voltage and Reverse Voltage
DCR03B
DCR03D
DCR03F
VDRM,
VRRM
On-State Average Current
(TA=30oC, 180o Conduction Angles)
On-State RMS Current
(TA=30oC, 180o Conduction Angles)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60Hz)
Forward Peak Gate Current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
IT(AV)
IT(RMS)
ITSM
IGM
PGM
PG(AV)
TJ
TSTG
Rating
200
400
600
0.3
0.47
8
0.1
0.1
0.01
-40 to +110
-40 to +150
Unit
V
A
A
A
A
W
W
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500 Min
(12.70)
.050 Typ
(1.27)
.022(0.56)
.014(0.36)
(2.1.5040)Typ
2oTyp
2oTyp
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
5oTyp 5oTyp (1.0.2570)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Peak Repetitive Forward or Reverse
Off-State Blocking Current
TJ=25oC
TJ=110oC
Peak Forward On-State Voltage
Continuous DC Gate Trigger Current
Continuous DC Gate Trigger Voltage
DC Holding Current
Critical Rate-of-Rise of Off-State Voltage
Gate Controlled Turn-on Time(tD+tR)
Thermal Resistance, Junction to Case
Symbol
IDRM, IRRM
VTM
IGT
VGT
IH
dv/dt
Tgt
RθJC
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
5.0
2.2
75
Max
10
100
1.7
200
0.8
5.0
-
-
-
Unit
µA
V
µA
V
mA
V/µS
µsec
oC/W
Test Conditions
VAK=Rated VDRM or VRRM
RGK=1K
ITM=0.3A Peak
VAK=7V DC, RL=100
VAK=7V DC, RL=100
RGK=1K
RGK=1K
IGT=10mA
-

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