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PDF DC8550 Data sheet ( Hoja de datos )
| Número de pieza | DC8550 | |
| Descripción | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DC8550
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 2W output amplifier of portable
radios in class B push-pull operation.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
VCEO
-25
Emitter-Base Voltage
VEBO
-6
Collector Current
IC -1.5
Base Current
IB -500
Total Power Dissipation
Total Power Dissipation(TC=25oC)
PD
PD
1
2
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
A
mA
W
W
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO -40
-
Collector-Emitter Breakdown Voltage BVCEO -25
-
Emitter-Base Breakdown Volatge
BVEBO
-6
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
IEBO
VCE(sat)
VBE(sat)
VBE(on)
-
-
-
-
-
-
-
-
DC Current Gain(1)
hFE1
hFE2
45
85
-
-
hFE3
40
-
Transition Frequency
fT 100
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
Max
-
-
-
-0.1
-0.1
-0.5
-1.2
-1
-
500
-
-
Classification of hFE2
Rank
B
C
Range
85~160
120~200
D
160~300
E
250~500
Unit
V
V
V
µA
µA
V
V
V
-
-
-
MHz
Test Conditions
IC=-100µA
IC=-2mA
IE=-100µA
VCB=-35V
VEB=-6V
IC=-0.8A, IB=-80mA
IC=-0.8A, IB=-80mA
IC=-10mA, VCE=-1V
IC=-5mA, VCE=-1V
IC=-100mA, VCE=-1V
IC=-800mA, VCE=-1V
IC=-50mA, VCE=-10V, f=100MHz
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