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NXP Semiconductors - Single high-speed switching diode

Numéro de référence BAS21J
Description Single high-speed switching diode
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BAS21J fiche technique
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BAS21J
Single high-speed switching diode
Rev. 01 — 8 March 2007
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, encapsulated in a SOD323F (SC-90) very small and
flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I High switching speed: trr 50 ns
I Low leakage current
I Repetitive peak reverse voltage:
VRRM 300 V
I Excellent coplanarity and improved
thermal behavior
I Low capacitance: Cd 2 pF
I Reverse voltage: VR 300 V
I Very small and flat lead SMD plastic
package
1.3 Applications
I High-speed switching
I General-purpose switching
I Voltage clamping
I Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
IF
IR
VR
trr
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
Conditions
VR = 250 V
Min
[1] -
-
-
[2] -
Typ
-
-
-
-
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
[2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA.
Max
250
150
300
50
Unit
mA
nA
V
ns

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