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PDF 2SC1623-L6 Data sheet ( Hoja de datos )
| Número de pieza | 2SC1623-L6 | |
| Descripción | (2SC1623-L6/-L7) NPN Silicon Epitaxial Transistors | |
| Fabricantes | MCC | |
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
2SC1623-L6
2SC1623-L7
Features
• High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA)
• High voltage: VCEO=50V
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
50
60
5.0
100
200
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
OC
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
ICBO Collector Cutoff Current
(VCB=60Vdc,IE=0)
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
--- --- 0.1 uAdc
--- --- 0.1 uAdc
hF
V CE(sat)
VBE(SAT)
VBE
Cob
fT
DC Current Gain*
(IC=1.0mAdc, VCE=6.0Vdc)
Collector Saturation Voltage*
(IC=100mAdc, IB=10mAdc)
Base Saturation Voltage*
(IC=100mAdc,IB=10mAdc)
Base Emitter Voltage*
(VCE=6.0Vdc, IC=1.0mAdc)
Collector Capacitance
(VCB=6.0Vdc, IE=0, f=1.0MHz)
Gain Bandwidth product
(VCE=6.0Vdc, IE=10mAdc)
200 ---
--- 0.15
--- 0.86
0.55 0.62
--- 3.0
--- 250
600 ---
0.3 Vdc
1.0 Vdc
0.65 Vdc
--- pF
--- MHz
hFE CLASSIFICATION
Marking
L6
hFE 200-400
* Pulse Test PW<350us, duty cycle<2%
L7
400-600
NPN Silicon
Epitaxial Transistors
SOT-23
A
D
CB
C
FE
BE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
NOTE
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: 5
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1 of 2
2007/06/04
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC1623-L6.PDF ] | |
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