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PDF 2SB1426 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1426 | |
| Descripción | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SB1426
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for DC-to-DC converter applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
-20
-20
-6
-3
750
+150
-55 to +150
Unit
V
V
V
A
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO -20
Collector-Emitter Breakdown Voltage
BVCEO -20
Emitter-Base Breakdown Volatge
BVEBO
-6
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
DC Current Gain(1)
IEBO
VCE(sat)
hFE
-
-
82
Transition Frequency
fT -
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-
-
240
35
Max
-
-
-
-100
-100
-500
390
-
-
Unit
V
V
V
nA
nA
mV
-
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-5V, IC=0
IC=-2A, IB=-0.1A
IC=-100mA, VCE=-2V
IC=-500mA, VCE=-2V, f=100MHz
VCB=-10V, f=1MHz, IE=0
Classification of hFE
Rank
P
Range
82~180
Q
120~270
R
180~390
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB1426.PDF ] | |
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