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PDF 2SA1302 Data sheet ( Hoja de datos )

Número de pieza 2SA1302
Descripción Silicon PNP Triple Diffused Type Transistor
Fabricantes Toshiba　
Logotipo Toshiba Logotipo




1. transistor ( PNP, Transistor )






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No Preview Available ! 2SA1302 Hoja de datos, Descripción, Manual

TOSHIBA
Discrete Semiconductors
Transistor
Silicon PNP Epitaxial Type (PCT Process)
For General Purpose Switching and
Amplifier Applications
Features
• Complementary to 2SC3281
• Recommended for 100W High Fidelity Audio Frequency
- Amplifier Output Stage
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
VCBO -200
V
VCEO -200
V
VEBO -5
V
IC -15 A
IB -1.5 A
PC 150 W
Tj 150 °C
Tstg -55 ~ 150 °C
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Volt-
age
DC Current Gain
Saturation Voltage Collector-Emit-
ter
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR) CEO)
VCB = -200V, IE = 0
VEB = -5V, IC = 0
IC = -50mA, IB = 0
hFE(1)
(Note)
hFE(2)
VCE(sat)
VCE = -5V, IC = -1mA
VCE = -5V, IC = -8A
IC = -10A, IB = -1A
VBE VCE = -5V, IC = -8A
fT VCE = -5V, IC = -1A
Cob VCB = -10V, IE = 0,
f = 1MHz
Note: hFE (1) Classification R : 0: 55 ~ 110, 0 : 80 ~ 160
MIN. TYP. MAX. UNIT
––
––
-200 –
-5.0 µA
-5.0 µA
–V
55 – 160
35 60
–
– -1.5 -3.0
V
– -1.0 -1.5
V
– 25
- MHz
– 470
-
pF
TOSHIBA CORPORATION
2SA1302
Unit in mm
1/2

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