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PDF NESG2031M05 Data sheet ( Hoja de datos )
| Número de pieza | NESG2031M05 | |
| Descripción | NPN SiGe HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | CEL | |
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NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2031M05
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 21.5 dB at 2 GHz
• LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
M05
DESCRIPTION
NEC's NESG2031M05 is fabricated using NEC s high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
NEC slow profile, flat lead style M05 Package provides high
frequency performance for compact wireless designs.
NESG2031M05
M05
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP MAX
NF
Ga
NF
Ga
MSG
|S21E|2
P1dB
OIP3
fT
Cre
ICBO
IEBO
hFE
Noise Figure at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Maximum Stable Gain1 at VCE = 3 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz
Output Power at 1dB Compression Point at
VCE = 3 V, IC = 20 mA, f = 2 GHz
Output 3rd Order Intercept Point at VCE = 3 V, IC = 20 mA, f = 2 GHz
Gain Bandwidth Product at VCE = 3 V, IC = 20 mA, f = 2 GHz
Reverse Transfer Capacitance2 at VCB = 2 V, IC = 0 mA, f = 1 GHz
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain3 at VCE = 2 V, IC = 5 mA
dB
dB
dB
dB
dB
dB
dBm
dBm
GHz
pF
nA
nA
15.0
19.0
16.0
20
130
1.3
10.0
0.8 1.1
17.0
21.5
18.0
13
23
25
0.15 0.25
100
100
190 260
Notes:
1. MSG = S21
S12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
3. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
California Eastern Laboratories
1 page  
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 1 V
f = 2 GHz
25
MSG
MAG
20
15
|S21e|2
10
5
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 1 V
f = 5 GHz
25
20
15 MAG
10
|S21e|2
5
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 2 GHz
25
MSG
MAG
20
15 |S21e|2
10
5
0
1 10 100
Collector Current, IC (mA)
NESG2031M05
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 1 V
f = 3 GHz
25
20
MSG
MAG
15
10 |S21e|2
5
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 1 GHz
25
MSG
20 |S21e|2
15
10
5
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 3 GHz
25
MSG
MAG
20
15
|S21e|2
10
5
0
1 10 100
Collector Current, IC (mA)
5 Page 
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M05
FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD
2.0 ±0.1
2.05±0.1
1.25±0.1
32
0.65
1.30
0.65
4
0.30-+00.0.15
1
0.59±0.05
PIN CONNECTIONS
1. Base
2. Emitter
3. Collector
4. Emitter
0.11-+00.0.15
NESG2031M05
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NESG2031M05.PDF ] | |
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