DataSheetWiki


NESG2030M04 fiches techniques PDF

CEL - SiGe HIGH FREQUENCY TRANSISTOR

Numéro de référence NESG2030M04
Description SiGe HIGH FREQUENCY TRANSISTOR
Fabricant CEL 
Logo CEL 





1 Page

No Preview Available !





NESG2030M04 fiche technique
www.DataSheet4U.com
NPN SiGe RF TRANSISTOR
NESG2030M04
NPN SiGe HIGH FREQUENCY TRANSISTOR
FEATURES
SiGe TECHNOLOGY:
fT = 60 GHz Process
LOW NOISE FIGURE:
NF = 0.9 dBm at 2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 20 dB at 2 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
M04
DESCRIPTION
NEC's NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of
60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides
a device with a usable current range of 250 μA to 25 mA. The NESG2030M04 provides excellent low voltage/low current performance.
NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NESG2030M04 is an ideal
choice for LNA and oscillator requirements in all mobile communication systems.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
ICBO
IEBO
hFE
Cre
NF
Ga
MSG
|S21E|2
P1dB
OIP3
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 0.5 V, IC = 0
DC Current Gain2 at VCE = 2 V, IC = 5 mA
Reverse Transfer Capacitance3 at VCB = 2 V, IE = 0 mA, f = 1 GHz
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT
Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
Output Power at 1 dB compression point
VCE = 2 V, IC = 20 mA, f = 2 GHz
Third Order Intercept Point, VCE = 2 V, IC = 20 mA, f = 2 GHz
UNITS
nA
nA
pF
dB
GHz
dB
dB
dBm
dBm
NESG2030M04
2SC5761
M04
MIN TYP MAX
200
200
200 400
0.17 0.22
0.9 1.1
16
18 20
16 18
12
22
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 μs, duty cycle 2 %.
3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
4. MSG = S21
S12
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005

PagesPages 10
Télécharger [ NESG2030M04 ]


Fiche technique recommandé

No Description détaillée Fabricant
NESG2030M04 NONLINEAR MODEL NEC
NEC
NESG2030M04 SiGe HIGH FREQUENCY TRANSISTOR CEL
CEL

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche