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Numéro de référence | MBM29PL32BM | ||
Description | (MBM29PL32TM/BM) FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash | ||
Fabricant | Fujitsu Media Devices | ||
Logo | |||
1 Page
www.DataSheet4U.com
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20907-3E
FLASH MEMORY
CMOS
32 M (4M × 8/2M × 16) BIT
MirrorFlashTM*
MBM29PL32TM/BM 90/10
s DESCRIPTION
The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by
16 bits. The MBM29PL32TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be
programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or
erase operations. The devices can also be reprogrammed in standard EPROM programmers.
s PRODUCT LINE UP
(Continued)
Part No.
VCC
Max Address Access Time
Max CE Access Time
Max Page Read Access Time
MBM29PL32TM/BM
90 10
3.0 V to 3.6 V
3.0 V to 3.6 V
90 ns
100 ns
90 ns
100 ns
25 ns
30 ns
s PACKAGES
48-pin plastic TSOP (1)
48-ball plastic FBGA
(FPT-48P-M19)
(BGA-48P-M20)
* : MirrorFlashTM is a trademark of Fujitsu Limited.
Notes : • Programming in byte mode ( × 8) is prohibited.
• Programming to the address that already contains data is prohibited.
(It is mandatory to erase data prior to overprogram on the same address.)
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Pages | Pages 30 | ||
Télécharger | [ MBM29PL32BM ] |
No | Description détaillée | Fabricant |
MBM29PL32BM | (MBM29PL32TM/BM) FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash | Fujitsu Media Devices |
US18650VTC5A | Lithium-Ion Battery | Sony |
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