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PDF MBM29DS163BE Data sheet ( Hoja de datos )
| Número de pieza | MBM29DS163BE | |
| Descripción | (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT | |
| Fabricantes | Fujitsu Media Devices | |
| Logotipo |  |
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FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20891-4E
FLASH MEMORY
CMOS
16 M (2 M × 8/1 M × 16) BIT Dual Operation
MBM29DS163TE/BE10
s DESCRIPTION
The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M
words of 16 bits each. The device is offered in 48-pin TSOP (1) and 48-ball FBGA packages. This device is
designed to be programmed in system with standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not
required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.
(Continued)
s PRODUCT LINE UP
Part No.
Power Supply Voltage (V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
MBM29DS163TE/BE10
VCC
=
2.0
V +0.2
−0.2
V
V
100
100
35
s PACKAGES
48-pin plastic TSOP (1)
Marking Side
48-pin plastic TSOP (1)
48-ball plastic FBGA
(FPT-48P-M19)
Marking Side
(FPT-48P-M20)
(BGA-48P-M11)
1 page  
(Continued)
MBM29DS163TE/BE10
FBGA
(TOP VIEW)
Marking Side
A6 B6 C6
A13 A12 A14
A5 B5 C5
A9 A8 A10
A4 B4 C4
WE RESET N.C.
A3
RY/BY
A2
A7
B3
WP/
ACC
B2
A17
C3
A18
C2
A6
A1 B1 C1
A3 A4 A2
D6
A15
D5
A11
D4
A19
D3
N.C.
D2
A5
D1
A1
E6
A16
E5
DQ7
F6
BYTE
F5
DQ14
G6
DQ15/
A-1
G5
DQ13
H6
VSS
H5
DQ6
E4
DQ5
F4
DQ12
G4
VCC
H4
DQ4
E3
DQ2
F3
DQ10
G3
DQ11
H3
DQ3
E2
DQ0
F2
DQ8
G2
DQ9
H2
DQ1
E1 F1 G1 H1
A0 CE OE VSS
(BGA-48P-M11)
5
5 Page 
MBM29DS163TE/BE10
• Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
• Command combinations not described in “MBM29DS163TE/BE Command Definitions” Table are il-
legal.
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MBM29DS163BE.PDF ] | |
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