PDF MBM29DL322BE Data sheet ( Hoja de datos )

Número de pieza	MBM29DL322BE
Descripción	(MBM29DL32xTE/BE) FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT
Fabricantes	Fujitsu Media Devices
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No Preview Available ! www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20881-7E FLASH MEMORY CMOS 32 M (4 M × 8/2 M × 16) BIT Dual Operation MBM29DL32XTE/BE80/90 s DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate memory arrays for operations. It is the Fujitsu’s standard 3 V only Flash memories, with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank. s PRODUCT LINE UP (Continued) Part No. Power Supply Voltage VCC (V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) s PACKAGES 48-pin plastic TSOP (1) MBM29DL32XTE/BE 80 3.3 +0.3 −0.3 80 90 3.0 +0.6 −0.3 90 80 90 30 35 48-pin plastic TSOP (1) 63-ball plastic FBGA Marking Side (FPT-48P-M19) Marking Side (FPT-48P-M20) (BGA-63P-M01) 1 page s PIN ASSIGNMENTS A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE RESET N.C. WP/ACC RY/BY A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 A1 A2 A3 A4 A5 A6 A7 A17 A18 RY/BY WP/ACC N.C. RESET WE A20 A19 A8 A9 A10 A11 A12 A13 A14 A15 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 MBM29DL32XTE/BE80/90 TSOP (1) (Marking Side) Normal Bend (FPT-48P-M19) (Marking Side) Reverse Bend (FPT-48P-M20) 48 A16 47 BYTE 46 VSS 45 DQ15/A-1 44 DQ7 43 DQ14 42 DQ6 41 DQ13 40 DQ5 39 DQ12 38 DQ4 37 VCC 36 DQ11 35 DQ3 34 DQ10 33 DQ2 32 DQ9 31 DQ1 30 DQ8 29 DQ0 28 OE 27 VSS 26 CE 25 A0 25 A0 26 CE 27 VSS 28 OE 29 DQ0 30 DQ8 31 DQ1 32 DQ9 33 DQ2 34 DQ10 35 DQ3 36 DQ11 37 VCC 38 DQ4 39 DQ12 40 DQ5 41 DQ13 42 DQ6 43 DQ14 44 DQ7 45 DQ15/A-1 46 VSS 47 BYTE 48 A16 (Continued) 5 5 Page MBM29DL32XTE/BE80/90 MBM29DL32XTE/BE Command Definitions Command sequence Bus write cy- First bus write cycle Second bus write cycle Third bus write cycle Fourth bus read/write cycle Fifth bus write cycle Sixth bus write cycle cles req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Read/ Reset1 Word 1 XXXh F0h  Byte          Read/ Reset1 Word 555h 2AAh 555h 3 AAh 55h F0h RA7 RD7  Byte AAAh 555h AAAh    Word 555h 2AAh (BA) 555h Autoselect 3 AAh 55h 90h IA7 ID7     Byte AAAh 555h (BA) AAAh Word 555h 2AAh 555h Program 4 AAh 55h A0h PA PD     Byte AAAh 555h AAAh Program Suspend 1 BA B0h           Program Resume 1 BA 30h           Word 555h 2AAh 555h 555h 2AAh 555h Chip Erase 6 AAh 55h 80h AAh 55h 10h Byte AAAh 555h AAAh AAAh 555h AAAh Sector Erase Word 555h 2AAh 555h 555h 2AAh 6 AAh 55h 80h AAh 55h SA 30h Byte AAAh 555h AAAh AAAh 555h Erase Suspend 1 BA B0h           Erase Resume 1 BA 30h           Set to Word Fast Mode Byte 3 555h 2AAh 555h AAh 55h 20h AAAh 555h AAAh       Fast Word Program 2 Byte 2 XXXh A0h PA PD         Reset from Word Fast Mode 2 Byte 2 BA 90h XXXh 6 F0h         Extended Sector Word Group 4 XXXh 60h SPA 60h SPA 40h SPA SD     Protection Byte 3 Word (BA) 55h Query*4 1 98h           (BA) Byte AAh (Continued) 11 11 Page

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