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Numéro de référence | MBM29DL324TE | ||
Description | (MBM29DL32xTE/BE) FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT | ||
Fabricant | Fujitsu Media Devices | ||
Logo | |||
1 Page
www.DataSheet4U.com
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20881-7E
FLASH MEMORY
CMOS
32 M (4 M × 8/2 M × 16) BIT Dual Operation
MBM29DL32XTE/BE80/90
s DESCRIPTION
The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or
2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system
3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also
be reprogrammed in standard EPROM programmers.
MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate
memory arrays for operations. It is the Fujitsu’s standard 3 V only Flash memories, with the additional capability
of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either
a program or an erase) operation is simultaneously taking place on the other bank.
s PRODUCT LINE UP
(Continued)
Part No.
Power Supply Voltage VCC (V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
s PACKAGES
48-pin plastic TSOP (1)
MBM29DL32XTE/BE
80
3.3
+0.3
−0.3
80
90
3.0
+0.6
−0.3
90
80 90
30 35
48-pin plastic TSOP (1)
63-ball plastic FBGA
Marking Side
(FPT-48P-M19)
Marking Side
(FPT-48P-M20)
(BGA-63P-M01)
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Pages | Pages 30 | ||
Télécharger | [ MBM29DL324TE ] |
No | Description détaillée | Fabricant |
MBM29DL324TD | (MBM29DL32xBD) 32M (4M X 8/2M X 16) BIT Dual Operation | Fujitsu Media Devices |
MBM29DL324TD-12 | 32M (4M x 8/2M x 16) BIT Dual Operation | Fujitsu |
MBM29DL324TD-80 | 32M (4M x 8/2M x 16) BIT Dual Operation | Fujitsu |
MBM29DL324TD-90 | 32M (4M x 8/2M x 16) BIT Dual Operation | Fujitsu |
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