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PDF MBM29DL162BD Data sheet ( Hoja de datos )
| Número de pieza | MBM29DL162BD | |
| Descripción | (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT | |
| Fabricantes | Fujitsu Media Devices | |
| Logotipo |  |
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FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20874-7E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT Dual Operation
MBM29DL16XTD/BD -70/90
s FEATURES
• 0.33 µm Process Technology
• Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”
in sGENERAL DESCRIPTION)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
s PRODUCT LINE UP
(Continued)
Part No.
Ordering Part No.
VCC
=
3.3
V +0.3 V
–0.3 V
VCC
=
3.0
V +0.6 V
–0.3 V
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
MBM29DL16XTD/MBM29DL16XBD
70 —
— 90
70 90
70 90
30 35
s PACKAGES
48-pin plastic TSOP (1)
Marking Side
48-pin plastic TSOP (1)
48-ball plastic FBGA
(FPT-48P-M19)
Marking Side
(FPT-48P-M20)
(BGA-48P-M13)
1 page  
s PIN ASSIGNMENTS
A15
A14
A13
A12
A11
A10
A9
A8
A19
N.C.
WE
RESET
N.C.
WP/ACC
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A1
A2
A3
A4
A5
A6
A7
A17
A18
RY/BY
WP/ACC
N.C.
RESET
WE
N.C.
A19
A8
A9
A10
A11
A12
A13
A14
A15
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
MBM29DL16XTD/BD-70/90
TSOP(1)
(Marking Side)
Normal Bend
FPT-48P-M19
(Marking Side)
Reverse Bend
FPT-48P-M20
48 A16
47 BYTE
46 VSS
45 DQ 15/A-1
44 DQ7
43 DQ14
42 DQ6
41 DQ13
40 DQ5
39 DQ12
38 DQ4
37 VCC
36 DQ11
35 DQ3
34 DQ10
33 DQ2
32 DQ9
31 DQ1
30 DQ8
29 DQ0
28 OE
27 VSS
26 CE
25 A0
25 A0
26 CE
27 VSS
28 OE
29 DQ0
30 DQ8
31 DQ1
32 DQ9
33 DQ2
34 DQ10
35 DQ3
36 DQ11
37 VCC
38 DQ4
39 DQ12
40 DQ5
41 DQ13
42 DQ6
43 DQ14
44 DQ7
45 DQ15/A-1
46 VSS
47 BYTE
48 A16
(Continued)
5
5 Page 
MBM29DL16XTD/BD-70/90
MBM29DL161TD/BD Sector Group Protection Verify Autoselect Codes Table
Type
A19 to A12
A6
A1
A0 A-1*1 Code (HEX)
Manufacture’s Code
BA*3 VIL VIL VIL VIL
04h
Byte
VIL 36h
MBM29DL161TD
BA*3 VIL VIL VIH
Device
Word
X 2236h
Code
Byte
VIL 39h
MBM29DL161BD
BA*3 VIL VIL VIH
Word
X 2239h
Sector Group Protection
Sector Group
Addresses
VIL
VIH
VIL
VIL
01h*2
*1 : A−1 is for Byte mode. At Byte mode, DQ8 to DQ14 are High-Z and DQ15 is A−1, the lowest address.
*2 : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses.
*3 : When VID is applied to A9, both Bank 1 and Bank 2 are put into Autoselect mode, which makes simultaneous
operation unable to be executed. Consequently, specifying the bank address is not required. However, the bank
address needs to be indicated when Autoselect mode is read out at command mode, because then it enables
to activate simultaneous operation.
Extended Autoselect Code Table
Type
Code DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
Manufacturer’s Code
04h A-1/0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0
(B)* 36h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0 0 1 1 0 1 1 0
MBM29DL161TD
Device
(W) 2236h 0 0 1 0 0 0 1 0 0 0 1 1 0 1 1 0
Code
(B)* 39h A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0 0 1 1 1 0 0 1
MBM29DL161BD
(W) 2239h 0 0 1 0 0 0 1 0 0 0 1 1 1 0 0 1
Sector Group Protection
01h A-1/0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1
* : At Byte mode, DQ8 to DQ14 are High-Z and DQ15 is A−1, the lowest address.
(B) : Byte mode
(W) : Word mode
HI-Z : High-Z
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MBM29DL162BD.PDF ] | |
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