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Numéro de référence | BD3533FVM | ||
Description | Termination Regulators | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Datasheet
1.0V to 5.5V, 1A 1ch
Termination Regulators for DDR-SDRAMs
BD3533F BD3533FVM BD3533HFN
General Description
BD3533 is a termination regulator that complies with
JEDEC requirements for DDR-SDRAM. This linear power
supply uses a built-in N-channel MOSFET and high-speed
OP-AMPS specially designed to provide excellent
transient response. It has a sink/source current capability
up to 1A and has a power supply bias requirement of 3.3V
to 5.0V for driving the N-channel MOSFET. By employing
an independent reference voltage input (VDDQ) and a
feedback pin (VTTS), this termination regulator provides
excellent output voltage accuracy and load regulation as
required by JEDEC standards. Additionally, BD3533 has a
reference power supply output (VREF) for DDR-SDRAM
or for memory controllers. Unlike the VTT output that goes
to “Hi-Z” state, the VREF output is kept unchanged when
EN input is changed to “Low”, making this IC suitable for
DDR-SDRAM under “Self Refresh” state.
Key Specifications
Termination Input Voltage Range: 1.0V to 5.5V
VCC Input Voltage Range:
2.7V to 5.5V
VDDQ Reference Voltage Range: 1.0V to 2.75V
Output Voltage:
1/2 x VDDQ V (Typ)
Output Current:
BD3533F
3.0A(Max)
BD3533FVM/HFN
1.0A(Max)
High Side FET ON-Resistance:
0.4Ω(Typ)
Low Side FET ON-Resistance:
0.4Ω(Typ)
Standby Current:
0.5mA(Typ)
Operating Temperature Range: -20°C to +100°C
Packages
W(Typ) x D(Typ) x H(Max)
Features
Incorporates a Push-Pull Power Supply for
Termination (VTT)
Incorporates a Reference Voltage Circuit (VREF)
Incorporates an Enabler
Incorporates an Under Voltage Lockout (UVLO)
Incorporates a Thermal Shutdown Protector (TSD)
Compatible with Dual Channel (DDR-2)
SOP8
5.00mm x 6.20mm x 1.71mm
Applications
Power Supply for DDR 1/2/3/4 - SDRAM
Power Supply for GDDR 1/2/3/4/5 - SDRAM
Power Supply for LPDDR 1/2/3/4 - SDRAM
MSOP8
HSON8
2.90mm x 4.00mm x 0.90mm 2.90mm x 3.00mm x 0.60mm
Typical Application Circuit, Block Diagram
VCC
VDDQ
VTT_IN
VCC
6
VDDQ
5
VTT_IN
7
VCC
VCC
VCC
Reference
Block
Enable EN
2
Thermal TSD
Protection
EN
UVLO
SOFT
TSD
UVLO EN
UVLO
TSD
VCC EN
UVLO
TSD
EN
UVLO
VTT
8
3
VTTS
4
VREF
1
GND
VTT
½x
VDDQ
○Product structure:Silicon monolithic integrated circuit
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has no designed protection against radioactive rays
1/17
TSZ02201-0J1J0A900700-1-2
07.Mar.2014 Rev.001
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Pages | Pages 20 | ||
Télécharger | [ BD3533FVM ] |
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