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What is BD3509MUV?

This electronic component, produced by the manufacturer "ROHM Semiconductor", performs the same function as "Nch FET Ultra LDO".


BD3509MUV Datasheet PDF - ROHM Semiconductor

Part Number BD3509MUV
Description Nch FET Ultra LDO
Manufacturers ROHM Semiconductor 
Logo ROHM Semiconductor Logo 


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High Performance Regulators for PCs
Nch FET Ultra LDO for PC Chipsets
BD3508MUV
Nch FET Ultra LDO for PC Chipsets
with Power Good
BD3509MUV
No.10030ECT22
Description
The BD3508MUV / BD3509MUV ultra low-dropout linear chipset regulator operates from a very low input supply, and offers
ideal performance in low input voltage to low output voltage applications. It incorporates a built-in N-MOSFET power
transistor to minimize the input-to-output voltage differential to the ON resistance (RON MAX=100mΩ/50mΩ) level. By
lowering the dropout voltage in this way, the regulator realizes high current output (Iomax=3.0A/4.0A) with reduced
conversion loss, and thereby obviates the switching regulator and its power transistor, choke coil, and rectifier diode. Thus,
the BD3508MUV / BD3509MUV are designed to enable significant package profile downsizing and cost reduction. An
external resistor allows the entire range of output voltage configurations between 0.65 and 2.7V, while the NRCS (soft start)
function enables a controlled output voltage ramp-up, which can be programmed to whatever power supply sequence is
required.
Features
1) Internal high-precision reference voltage circuit (0.65V±1%)
2) Built-in VCC under voltage lock out circuit (VCC=3.80V)
3) NRCS (soft start) function reduces the magnitude of in-rush current
4) Internal Nch MOSFET driver offers low ON resistance (65mΩ/28mΩ typ)
5) Built-in current limit circuit (3.0A/4.0A min)
6) Built-in thermal shutdown (TSD) circuit
7) Variable output (0.652.7V)
8) Incorporates high-power VQFN020V4040 package: 4.0×4.0×1.0(mm)
9) Tracking function
Applications
Notebook computers, Desktop computers, LCD-TV, DVD, Digital appliances
Model Lineup
Maximum output current
3A
4A
Package
VQFN020V4040
VCC=5V
BD3508MUV
BD3509MUV
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
1/20
2010.04 - Rev.C

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BD3509MUV equivalent
BD3508MUV,BD3509MUV
Reference Data
BD3508MUV
Vo
50mV/div
45mV
Vo
50mV/div
Io
2A/div
3.0A
Io
2A/div
64mV
3.0A
Technical Note
Vo
100mV/div
Io
2A/div
91mV
3A
Io=0A3A/3µsec t(5µsec/div)
Fig.1 Transient Response
(03A)
Co=150µF×2, CFB=0.01uF
Io=0A3A/3µsec t(5µsec/div)
Fig.2 Transient Response
(03A)
Co=150µF
Vo
50mV/div
55mV
Vo
50mV/div
79mV
Io
2A/div
3.0A
Io
2A/div 3.0A
Io=0A3A/3µsec t(5µsec/div)
Fig.3 Transient Response
(03A)
Co=47µF, CFB=0.01uF
Vo
100mV/div
87mV
Io
2A/div
3A
Io=3A0A/3µsec t(5µsec/div)
Fig.4 Transient Response
(30A)
Co=150µF×2
Io=3A0A/3µsec t(5µsec/div)
Fig.5 Transient Response
(30A)
Co=150µF
Ven
2V/div
Ven
2V/div
VNRCS
2V/div
Vo
1V/div
t(200µsec/div)
Fig.7: Waveform at output start
VNRCS
2V/div
Vo
1V/div
t(2msec/div)
Fig.8 Waveform at output OFF
Io=3A0A/3µsec t(5µsec/div)
Fig.6 Transient Response
(30A)
Co=47µF
VCC
Ven
VIN
Vo
VCCVINVen
Fig.9 Input sequence
VCC
Ven
VIN
Vo
VINVCCVen
Fig.10 Input sequence
VCC
Ven
VIN
Vo
VenVCCVIN
Fig.11 Input sequence
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
5/20
VCC
Ven
VIN
Vo
VCCVenVIN
Fig.12 Input sequence
2010.04 - Rev.C


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Information Total 23 Pages
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BD3509MUVThe function is Nch FET Ultra LDO. ROHM SemiconductorROHM Semiconductor

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