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CEL - NPN SILICON HIGH FREQUENCY TRANSISTOR

Numéro de référence NE696M01
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Fabricant CEL 
Logo CEL 





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NE696M01 fiche technique
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NEC's NPN SILICON HIGH NE696M01
FREQUENCY TRANSISTOR
FEATURES
• HIGH fT:
14 GHz TYP at 3 V, 10 mA
• LOW NOISE FIGURE:
NF = 1.6 dB TYP at 2 GHz
• HIGH GAIN:
|S21E|2 = 14 dB TYP at 2 GHz
• 6 PIN SMALL MINI MOLD PACKAGE
• EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
DESCRIPTION
NEC's NE696M01 is an NPN high frequency silicon epitaxial
transistor (NE685) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE696M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M01
TOP VIEW
2.1 ± 0.1
1.25 ± 0.1
0.65
2.0 ± 0.2
1.3
1
2
3
6
0.2 (All Leads)
5
4
SIDE VIEW
0.9 ± 0.1
0.7
0 ~ 0.1
+0.10
0.15 - 0.05
PIN OUT
1. Emitter
2. Emitter
3. Base
4. Emitter
5. Emitter
6. Collector
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
ICBO
IEBO
hFE1
fT
Cre2
|S21E|2
NF
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain at VCE = 3 V, IC = 10 mA
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz
µA
µA
GHz
pF
dB
dB
MIN
80
Notes:
1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.
NE696M01
M01
TYP
120
14
0.15
14
1.6
MAX
0.1
0.1
160
California Eastern Laboratories

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