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Numéro de référence | MAPLST2122-090CF | ||
Description | RF Power Field Effect Transistor | ||
Fabricant | Tyco Electronics | ||
Logo | |||
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 2110 — 2170 MHz, 90W, 28V
4/6/2005
Preliminary
Features
Q Designed for W-CDMA base station
applications in the 2.1 to 2.2 GHz
Frequency Band. Suitable for TDMA,
CDMA, W-CDMA and multicarrier power
amplifier applications.
Q 90W Output Power at P1dB (CW)
Q 11dB Minimum Gain at P1dB (CW)
Q W-CDMA Typical Performance:
(28VDC, -45dB ACPR @ 4.096MHz)
Q Output Power: 12W (typ.)
Q Gain: 12dB (typ.)
Q Efficiency: 16% (typ.)
Q 10:1 VSWR Ruggedness (CW @ 60W,
28V, 2110MHz)
Package Style
MAPLST2122-090CF
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Drain Current — Continuous
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID
PD
TSTG
TJ
Rating
65
20
20
206
-40 to +150
+200
Units
Vdc
Vdc
Adc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
RΘJC
Max
0.85
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.
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Pages | Pages 5 | ||
Télécharger | [ MAPLST2122-090CF ] |
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