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MAPLST2122-060CF fiches techniques PDF

Tyco Electronics - RF Power Field Effect Transistor

Numéro de référence MAPLST2122-060CF
Description RF Power Field Effect Transistor
Fabricant Tyco Electronics 
Logo Tyco Electronics 





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MAPLST2122-060CF fiche technique
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 2110 — 2170 MHz, 60W, 28V
4/6/2005
Preliminary
Features
Designed for W-CDMA base station
applications in the 2.1 to 2.2 GHz Frequency
Band. Suitable for TDMA, CDMA, and
multicarrier power amplifier applications.
Q 60W output power at P1dB (CW)
Q 12dB Minimum Gain at P1dB (CW)
Q W-CDMA Typical Performance:
(28VDC, -45dB ACPR @ 4.096MHz)
Q Output Power: 7.5W (typ.)
Q Gain: 12dB (typ.)
Q Efficiency: 16% (typ.)
Q 10:1 VSWR Ruggedness (CW @ 60W,
28V, 2110MHz)
Package Style
MAPLST2122-060CF
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
20
175
-40 to +150
+200
Units
Vdc
Vdc
W
°C
°C
Symbol
RΘJC
Max
1.0
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.

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