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MAPLST1900-060CF fiches techniques PDF

Tyco Electronics - RF Power Field Effect Transistor

Numéro de référence MAPLST1900-060CF
Description RF Power Field Effect Transistor
Fabricant Tyco Electronics 
Logo Tyco Electronics 





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MAPLST1900-060CF fiche technique
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 1890 — 1925 MHz, 60W, 26V
10/31/03
Preliminary
Features
Designed for PHS applications in the
1890-1925 MHz frequency band.
Q Typical performance in PHS mode at
-65 dBc ACPR (600kHz):
Q Average Output Power: 16W
Q Gain: 12.5dB (typ.)
Q Efficiency: 26% (typ.)
Q 10:1 VSWR Ruggedness at 16W, 26V,
1890MHz)
Package Style
MAPLST1900-060CF
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
20
97
-40 to +150
+200
Units
Vdc
Vdc
W
°C
°C
Symbol
RΘJC
Max
1.0
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.

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