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Número de pieza | MAPLST1820-090CF | |
Descripción | RF Power Field Effect Transistor | |
Fabricantes | Tyco Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MAPLST1820-090CF (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 1800 — 2000 MHz, 90W, 26V
5/14/04
Preliminary
Features
Package Style
Designed for base station applications in the
1805-1880MHz or 1930-1990MHz Frequency
Band. Suitable for GSM, EDGE, TDMA,
CDMA, and multi-carrier amplifier
applications
Q Typical EDGE performance @ 1880MHz,
26V, Idq=900mA:
Q Output Power: 45W
Q Power Gain: 13dB (typ.)
Q Efficiency: 35% (typ.)
P-240
Maximum Ratings
Drain—Source Voltage
Parameter
Gate—Source Voltage
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
+20, -20
206
-40 to +150
+200
Units
Vdc
Vdc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
RΘJC
Max
0.85
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MAPLST1820-090CF.PDF ] |
Número de pieza | Descripción | Fabricantes |
MAPLST1820-090CF | RF Power Field Effect Transistor | Tyco Electronics |
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