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MAPLST1820-030CF fiches techniques PDF

Tyco Electronics - RF Power Field Effect Transistor

Numéro de référence MAPLST1820-030CF
Description RF Power Field Effect Transistor
Fabricant Tyco Electronics 
Logo Tyco Electronics 





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MAPLST1820-030CF fiche technique
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 1800 — 2000 MHz, 30W, 26V
5/14/04
Preliminary
Features
Package Style
Designed for base station applications in the
1805-1880MHz or 1930-1990MHz Frequency
Band. Suitable for GSM, EDGE, TDMA,
CDMA, and multi-carrier amplifier
applications
Q 30W CW Output Power at P1dB
Q 13dB Gain at P1dB
Q 45% Drain Efficiency at P1dB
Q 10:1 VSWR Ruggedness (CW @ 30W,
26V, 1900MHz)
Q Internal input and output matching
P-237
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Drain Current — Continuous
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID
PD
TSTG
TJ
Rating
65
20
10
97
-40 to +150
+200
Units
Vdc
Vdc
Adc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
RΘJC
Max
1.8
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.

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