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Numéro de référence | MAPLST0810-045CF | ||
Description | RF Power Field Effect Transistor | ||
Fabricant | Tyco Electronics | ||
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RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 865 — 960 MHz, 45W, 26V
5/21/04
Preliminary
Features
Package Style
Q Designed for 865 to 960 MHz Broadband
Commercial and Base Station
Applications.
Q Typical CW RF Performance at 960MHz,
26VDC:
Q POUT: 45W (P1dB)
Q Gain: 17.5dB
Q Efficiency: 50%
Q Ruggedness: 10:1 VSWR @ 45W CW,
26V, 900MHz
Q High Gain, High Efficiency and High
Linearity
Q Excellent Thermal Stability
P-239
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
20
117
-40 to +150
+200
Units
Vdc
Vdc
W
°C
°C
Symbol
RΘJC
Max
1.5
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.
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Pages | Pages 4 | ||
Télécharger | [ MAPLST0810-045CF ] |
No | Description détaillée | Fabricant |
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