(PDF) MAPL-000817-015C00 Datasheet - RF Power Field Effect Transistor

Número de pieza	MAPL-000817-015C00
Descripción	RF Power Field Effect Transistor
Fabricantes	Tyco Electronics
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No Preview Available ! RFwww.DataSheet4U.com Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 1/11/06 Preliminary Features • Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz, 26Vdc, CW • Typical Power Output: 16.5W • Gain: 16.5dB • Efficiency: 50% • 10:1 VSWR Ruggedness at 15W, 26Vdc, 960MHz Package Style MAPL-000817-015C00 Maximum Ratings Drain—Source Voltage Parameter Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 31.25 -65 to +150 150 Units Vdc Vdc W °C °C Symbol RΘJC Max 4 Unit ºC/W NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag- ing MOS devices should be observed. 1 page RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V MAPL-000817-015C00 1/11/06 Preliminary Figure 5. MAPL-000817-015C00 Pin Connections 5 5 Page

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PDF MAPL-000817-015C00 Data sheet ( Hoja de datos )