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PDF MADS-002545-1307M Data sheet ( Hoja de datos )
| Número de pieza | MADS-002545-1307M | |
| Descripción | SURMOUNTTM Medium Barrier Silicon Schottky Diodes | |
| Fabricantes | Tyco Electronics | |
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SURMOUNTTM Medium Barrier Silicon Schottky Diodes:
MADS-002545-1307M
Cross-Over Quad Series Ultra-small 600x600um Surface-Mount Chip
V1
Features
• Ultra Low Parasitic Capitance and Inductance
• Surface Mountable in Microwave Circuits , No
Wirebonds Required
• Rugged HMIC Construction with Polyimide
Scratch Protection
• Reliable, Multilayer Metalization with a Diffusion
• Barrier, 100% Stabilization Bake (300 °C, 16 hours)
• Lower Susceptibility to ESD Damage
Description and Applications
The MADS-002545-1307M Series SurMount™
Medium Barrier, Silicon Schottky Cross-Over Quad
Diodes are fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process. HMIC
circuits consist of Silicon pedestals which form diodes or
via conductors embedded in a glass dielectric, which
acts as the low dispersion, low loss, microstrip transmission
medium. The combination of silicon and glass allows
HMIC devices to have excellent loss and power dissipation
characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a
beam lead device coupled with the superior mechanical
performance of a chip. The SurMount structure employs
very low resistance silicon vias to connect the Schottky
contacts to the metalized mounting pads on the
bottom surface of the chip. These devices are
reliable, repeatable, and a lower cost performance
solution to conventional devices. They have lower
susceptibility to electrostatic discharge than
conventional beam lead Schottky diodes.
The multi-layer metalization employed in the fabrication of
the Surmount Schottky junctions includes a platinum
diffusion barrier, which permits all devices to be subjected to
a 16-hour non-operating stabilization bake at 300°C.
The “ 0202 ” outline allows for Surface Mount placement
and multi- functional polarity orientations. The
MADS-002545-1307M Series SurMountä Medium Barrier
Silicon Schottky Cross-Over Quad Diodes are
recommended for use in microwave circuits through Ku
band frequencies for lower power applications such as
mixers, sub-harmonic mixers, detectors and limiters. The
HMIC construction facilitates the direct replacement of more
fragile beam lead diodes with the corresponding Surmount
diode, which can be connected to a hard or soft substrate
circuit with solder.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Topview
A
B
DE
D
Sideview
Case Style 1307
C
MADS-002545-1307M
Equivalent Circuit
Dim
A
B
C
D Sq.
E Sq.
Inches
Min. Max.
0.023
0.025
0.023
0.025
0.004
0.008
0.007
0.009
0.007
0.009
Millimeters
Min. Max.
0.575 0.625
0.575 0.625
0.102 0.203
0.175 0.225
0.175 0.225
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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